AL ON GAAS(110) INTERFACE - POSSIBILITY OF ADATOM CLUSTER FORMATION

被引：187

作者：

ZUNGER, A ^{[1
]}

机构：

[1] UNIV COLORADO, DEPT PHYS, BOULDER, CO 80309 USA

来源：

关键词：

D O I：

10.1103/PhysRevB.24.4372

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4372 / 4391

页数：20

共 118 条

[1] ALLEN RE, 1980, B AM PHYS SOC, V25, P194
[2] ALLEN RE, UNPUBLISHED
[3] ALLEN RE, SERI PR611737 REP, pSS12
[4] APAI G, SOLID STATE COMMUN
[5] ASCARELLI P, 1977, J PHYS-PARIS, V38, P124
[6] ELECTROREFLECTANCE OF GAAS AND GAP TO 27 EV USING SYNCHROTRON RADIATION
ASPNES, DE
OLSON, CG
LYNCH, DW
[J]. PHYSICAL REVIEW B, 1975, 12 (06): : 2527 - 2538
[7] METAL-SEMICONDUCTOR SURFACE AND INTERFACE STATES ON (110) GAAS
BACHRACH, RZ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1340 - 1343
[8] SURFACE-REACTIONS AND INTERDIFFUSION
BACHRACH, RZ
BAUER, RS
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1149 - 1153
[9] BACHRACH RZ, 1978, 14TH P INT C PHYS SE, P1073
[10] BAETZOLD R, 1977, J PHYS, V38, P175