TRANSPORT-PROPERTIES OF ONE-DIMENSIONAL, DISORDERED 2-BAND SYSTEMS

被引：2

作者：

GARCIA, ME ^{[1
]}

LLOIS, AM ^{[1
]}

BALSEIRO, CA ^{[1
]}

WEISSMANN, M ^{[1
]}

机构：

[1] COMIS NACL ENERGIA ATOM,DEPT FIS,RA-8250 BUENOS AIRES,ARGENTINA

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1986年 / 19卷 / 30期

关键词：

D O I：

10.1088/0022-3719/19/30/015

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：6053 / 6061

页数：9

共 12 条

[1]

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[3] ELECTRONIC-STRUCTURE OF DISORDERED INTRINSIC SEMICONDUCTOR AND S-D SYSTEMS - 2-BAND LOCALIZATION [J].

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[5]

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KRAMER, B .

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[7] ELECTRICAL RESISTIVITY OF LIQUID TRANSITION-METALS [J].

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[8]

OSLEDEC VI, 1968, T MOSCOW MATH SOC, V19, P197

[9]

PICHARD JL, 1984, THESIS ORSAY PARIS

[10] SCALING STUDIES OF THE RESISTANCE OF THE ONE-DIMENSIONAL ANDERSON MODEL WITH GENERAL DISORDER [J].

STONE, AD ;

JOANNOPOULOS, JD ;

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PHYSICAL REVIEW B, 1981, 24 (10) :5583-5596

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