GROWTH OF CULNSE2 ON CDS USING MOLECULAR-BEAM EPITAXY

被引：43

作者：

WHITE, FR

CLARK, AH

GRAF, MC

KAZMERSKI, LL

机构：

[1] UNIV MAINE,ORONO,ME 04473

[2] SOLAR ENERGY RES INST,GOLDEN,CO 80401

来源：

JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 01期

关键词：

D O I：

10.1063/1.325624

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Molecular beam epitaxy has been used to grow CuInSe2 on CdS(0001B). Epitaxial growth, as determined from in situ reflection electron diffraction, was observed at a substrate temperature of 300°C.

引用

页码：544 / 545

页数：2

共 7 条

[1] STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
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[3] IRELAND PJ, UNPUBLISHED
[4] THIN-FILM CULNSE2-CDS HETEROJUNCTION SOLAR-CELLS
KAZMERSKI, LL
WHITE, FR
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (06) : 961 - 962
[6] MOLECULAR-BEAM EPITAXY OF II-VI COMPOUNDS
SMITH, DL
PICKHARDT, VY
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (06) : 2366 - 2374
[7] ABSORPTION-COEFFICIENT MEASUREMENTS FOR VACUUM-DEPOSITED CUTERNARY THIN-FILMS
SUN, LY
KAZMERSKI, LL
CLARK, AH
IRELAND, PJ
MORTON, DW
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02): : 265 - 268

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