CHARGE DISTURBANCES AROUND NEUTRAL DEFECTS - SIMPLE NEW METHOD APPLIED TO THE IDEAL SILICON VACANCY

被引：6

作者：

KANE, EO

SCHLUTER, M

机构：

[1] Bell Laboratories, Murray Hill

来源：

PHYSICAL REVIEW B | 1979年 / 19卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.19.5232

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We suggest a new method for calculating the charge disturbance around a neutral defect which we develop in detail for the ideal vacancy in silicon. Comparison with Green's-function results of Baraff and Schlüter indicates that the method is quite accurate, yet extremely simple. © 1979 The American Physical Society.

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页码：5232 / 5239

页数：8

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