GATE OXIDE THINNING AS RELATED TO DOPING EFFECTS

被引：1

作者：

BELLUTTI, P

CLAEYS, C

DEBUSSCHERE, I

CORTICELLI, F

GOVONI, D

机构：

[1] Material Science Division, Trento, 38050, Povo

[2] IMEC, Leuven, B-3030

[3] CNR LAMEL, Bologna, 1 - 40129, Via Castagnoli

来源：

EUROPEAN TRANSACTIONS ON TELECOMMUNICATIONS | 1990年 / 1卷 / 02期

关键词：

D O I：

10.1002/ett.4460010213

中图分类号：

TN [电子技术、通信技术];

学科分类号：

0809 ;

摘要：

Gate oxide thinning induced by selective oxidation process has been studied. Tests on samples having both high and low boron doping concentration after wet oxidation of 9 and 50 h, have shown that gate thinning phenomenon is related to substrate doping concentration for p‐type silicon. The chemical resistivity of the nitride or oxynitride layer, which is assumed to be responsible for the gate thinning, has been tested and it also results to be related to the substrate boron concentration. A possible interpretation of the occurrence of the doping effect is given. Copyright © 1990 John Wiley & Sons, Ltd.

引用

页码：155 / 158

页数：4

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