REFRACTORY-METAL NITRIDE ENCAPSULATION FOR COPPER WIRING

被引:23
作者
LI, J [1 ]
MAYER, JW [1 ]
机构
[1] ARIZONA STATE UNIV,CTR SOLID STATE SCI,TEMPE,AZ 85287
关键词
D O I
10.1557/S0883769400047333
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
[No abstract available]
引用
收藏
页码:52 / 56
页数:5
相关论文
共 30 条
[1]   STRESS GENERATION IN THIN CU-TI FILMS IN VACUUM AND HYDROGEN [J].
APBLETT, C ;
FICALORA, PJ .
JOURNAL OF APPLIED PHYSICS, 1991, 69 (08) :4431-4432
[2]  
ARCOT B, 1992, 9TH INT VLSI MULT IN, P301
[3]   DOUBLE-LEVEL COPPER INTERCONNECTIONS USING SELECTIVE COPPER CVD [J].
AWAYA, N ;
ARITA, Y .
JOURNAL OF ELECTRONIC MATERIALS, 1992, 21 (10) :959-964
[4]   THERMAL-STRESS-INDUCED VOIDING IN NARROW, PASSIVATED CU LINES [J].
BORGESEN, P ;
LEE, JK ;
GLEIXNER, R ;
LI, CY .
APPLIED PHYSICS LETTERS, 1992, 60 (14) :1706-1708
[5]   THE OXIDATION OF METALS [J].
CAMPBELL, WE ;
THOMAS, UB .
TRANSACTIONS OF THE ELECTROCHEMICAL SOCIETY, 1947, 91 :623-640
[6]   LOW RESISTIVITY BODY-CENTERED CUBIC TANTALUM THIN-FILMS AS DIFFUSION-BARRIERS BETWEEN COPPER AND SILICON [J].
CATANIA, P ;
DOYLE, JP ;
CUOMO, JJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1992, 10 (05) :3318-3321
[7]   MEASUREMENT AND INTERPRETATION OF STRESS IN COPPER-FILMS AS A FUNCTION OF THERMAL HISTORY [J].
FLINN, PA .
JOURNAL OF MATERIALS RESEARCH, 1991, 6 (07) :1498-1501
[8]  
GARDNER DS, 1991, 8TH P INT VLSI MULT, P99
[9]   ROOM-TEMPERATURE OXIDATION OF SILICON CATALYZED BY CU3SI [J].
HARPER, JME ;
CHARAI, A ;
STOLT, L ;
DHEURLE, FM ;
FRYER, PM .
APPLIED PHYSICS LETTERS, 1990, 56 (25) :2519-2521
[10]  
HO PS, 1989, PRINCIPLES ELECTRONI, P809