DETERMINATION OF SURFACE CONTAMINATION ON SILICON BY LARGE ANGLE ION SCATTERING

被引：31

作者：

THOMPSON, DA

BARBER, HD

MACKINTOSH, WD

机构：

[1] Solid State Devices Department, Canadian Westinghouse Company Limited, Hamilton, Ont.

[2] Atomic Energy of Canada Limited, Chalk River, Ont.

来源：

APPLIED PHYSICS LETTERS | 1969年 / 14卷 / 03期

关键词：

D O I：

10.1063/1.1652725

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Experiments are described in which the energy spectra of 1-MeV He + ions backscattered 150°from a silicon surface have been used to identify and measure the contamination on the surface. Contamination from hydrofluoric acid solutions containing gold and copper in concentrations ranging from 0.1 to 100 parts per million was studied. Less than one half a monolayer of contaminant was easily resolved and identified. Coverages of this order were obtained from solutions containing 0.1 ppm of the contaminant. © 1969 The American Institute of Physics.

引用

页码：102 / +

页数：1

共 5 条

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