GAINP MULTIWAFER GROWTH BY LP-MOVPE FOR HBTS, LASERS, LEDS OR SOLAR-CELLS

This paper reports a new study of LP-MOVPE process for multiwafer applications in ternary GaInP alloys, rivalling substitution or adding to AlGaAs in a variety of applications, such as HBTs, lasers, LEDs or solar cells. Rising demand for these consumer applications has been driving the development of GaInP multiwafer reactors with high volume throughput. The low pressure planetary reactor has been used in this investigation. It has the capability to grow on multiple wafers at the same time for qualification, characterization or device processing. This eliminates uncertainties from single wafer reactors and allows absolute identical growth conditions for different substrates in the same run for studies of substrate effects.