SILICON VAPOR-PHASE EPITAXY

被引：15

作者：

NISHIZAWA, JI

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1982年 / 56卷 / 02期

关键词：

D O I：

10.1016/0022-0248(82)90445-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：273 / 280

页数：8

共 16 条

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[5] ANISOTROPY IN GROWTH-RATES OF SILICON DEPOSITED BY REDUCTION OF SILICON TETRACHLORIDE [J].

NISHIZAWA, J ;

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[6] MECHANISMS OF CHEMICAL VAPOR-DEPOSITION OF SILICON [J].

NISHIZAWA, J ;

NIHIRA, H .

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[7]

NISHIZAWA J, 1974, J CRYST GROWTH, V24, P215, DOI 10.1016/0022-0248(74)90306-6

[8]

NISHIZAWA J, 1980, ICCG6 EXT ABSTR, V1, P338

[9]

NISHIZAWA J, 1978, CRYST GROWTH, V2, P57

[10]

NISHIZAWA J, UNPUB

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