NEW INTERPRETATION OF VALENCE BAND DENSITY OF STATES OF AMORPHOUS GROUP 4 SEMICONDUCTORS

被引：7

作者：

TREUSCH, J ^{[1
]}

KRAMER, B ^{[1
]}

机构：

[1] UNIV DORTMUND,INST PHYS,46 DORTMUND,WEST GERMANY

来源：

SOLID STATE COMMUNICATIONS | 1974年 / 14卷 / 02期

关键词：

D O I：

10.1016/0038-1098(74)90209-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：169 / 171

页数：3

共 10 条

[1] BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES [J].

COHEN, ML ;

BERGSTRESSER, TK .

PHYSICAL REVIEW, 1966, 141 (02) :789-+

[2]

HERMAN F, 1968, METHODS COMPUTATIONA

[3] ELECTRONIC PROPERTIES OF COMPLEX CRYSTALLINE AND AMORPHOUS PHASES OF GE AND SI .1. DENSITY OF STATES AND BAND STRUCTURES [J].

JOANNOPOULOS, JD ;

COHEN, ML .

PHYSICAL REVIEW B, 1973, 7 (06) :2644-2657

[4] A PSEUDOPOTENTIAL APPROACH FOR GREENS FUNCTION OF ELECTRONS IN AMORPOUS SOLIDS [J].

KRAMER, B .

PHYSICA STATUS SOLIDI, 1970, 41 (02) :649-&

[5]

KRAMER B, TO BE PUBLISHED

[6] TETRAHEDRALLY COORDINATED RANDOM-NETWORK STRUCTURE [J].

POLK, DE ;

BOUDREAUX, DS .

PHYSICAL REVIEW LETTERS, 1973, 31 (02) :92-95

[7]

SHEVCHIK NJ, TO BE PUBLISHED

[8]

TEJEDA J, 1973, P INT C AMORPHOUS LI

[9] ELECTRONIC DENSITY OF STATES OF AMORPHOUS SI AND GE [J].

THORPE, MF ;

WEAIRE, D .

PHYSICAL REVIEW LETTERS, 1971, 27 (23) :1581-&

[10]

WIECH G, 1973, 1971 P INT C BAND ST, P629

← 1 →