DIRECT IMAGING OF THE VALENCE ELECTRONIC-STRUCTURE OF SOLIDS BY (E,2E) SPECTROSCOPY

被引：4

作者：

CAI, YQ

VOS, M

STORER, P

KHEIFETS, AS

MCCARTHY, IE

WEIGOLD, E

机构：

[1] Electronic Structure of Materials Centre, The Flinders University of South Australia, Adelaide, SA 5001

来源：

SOLID STATE COMMUNICATIONS | 1995年 / 95卷 / 01期

基金：

澳大利亚研究理事会;

关键词：

SEMICONDUCTORS; ELECTRONIC BAND STRUCTURE;

D O I：

10.1016/0038-1098(95)00222-7

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The spectral momentum density rho(E, q) of the valence electrons of solid thin films of annealed amorphous carbon, amorphous silicon and silicon carbide has been measured using (e,2e) spectroscopy. Substantial contrast has been observed between the images of the three momentum densities, which show not only well-defined energy band dispersion in the three materials, but also the antisymmetric gap due to the unequal potentials between the Si and C sites in the silicon carbide. The relation between the three momentum densities is explained within the framework of the one-electron band theory of solids.

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页码：25 / 29

页数：5

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