ISOTOPE-INDUCED SYMMETRY CHANGE IN DYNAMIC SEMICONDUCTOR DEFECTS

被引：42

作者：

KAHN, JM ^{[1
]}

FALICOV, LM ^{[1
]}

HALLER, EE ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,BERKELEY,CA 94720

来源：

PHYSICAL REVIEW LETTERS | 1986年 / 57卷 / 16期

关键词：

D O I：

10.1103/PhysRevLett.57.2077

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：2077 / 2080

页数：4

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