CRYSTALLIZATION OF ION-IMPLANTED SILICON LAYERS BY THE NANOSECOND LASER-PULSES

被引：4

作者：

ROMANOV, SI ^{[1
]}

KACHURIN, GA

SMIRNOV, LS

KHAIBULLIN, IB

SHTYRKOV, EI

BAJAZITOV, RM

机构：

[1] Acad Sci USSR, Inst Semicond Phys, Siberian Branch, Novosibirsk, RUSSIA

[2] Acad Sci USSR, Kazan Phys Tech Inst, Kazan Branch, Kazan, RUSSIA

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1980年 / 48卷 / 1-4期

关键词：

D O I：

10.1080/00337578008209252

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：191 / 194

页数：4

共 14 条

[1]

ABRU UR, 1977, ELEKTRON TEKH, V3, P75

[2]

ANTONENKO AK, 1976, FIZ TEKH POLUPROV, V10, P139

[3] SPATIALLY CONTROLLED CRYSTAL REGROWTH OF ION-IMPLANTED SILICON BY LASER IRRADIATION [J].

CELLER, GK ;

POATE, JM ;

KIMERLING, LC .

APPLIED PHYSICS LETTERS, 1978, 32 (08) :464-466

[4] AMORPHOUS-POLYCRYSTAL TRANSITION INDUCED BY LASER-PULSE IN SELF-ION IMPLANTED SILICON [J].

FOTI, G ;

RIMINI, E ;

VITALI, G ;

BERTOLOTTI, M .

APPLIED PHYSICS, 1977, 14 (02) :189-191

[5]

KACHURIN GA, 1976, FIZ TEKH POLUPROV, V10, P2012

[6]

KACHURIN GA, 1977, ION IMPLANTATION SEM, P445

[7]

KACHURIN GA, 1975, FIZ TEKH POLUPROV, V9, P1428

[8] EFFECT OF IMPLANTATION TEMPERATURE ON MECHANISM OF MISFIT DISLOCATION FORMATION [J].

KALININ, VV ;

GERASIMENKO, NN ;

STENIN, SI .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 45 (02) :377-385

[9]

KHAIBULLIN IB, 1977, FIZ TEKH POLUPROV, V11, P330

[10]

KHAIBULLIN IB, 1974, VINITI206174 DEP

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