ELECTRON MOBILITIES BASED ON AN EXACT NUMERICAL-ANALYSIS OF THE DIELECTRIC FUNCTION-DEPENDENT LINEARIZED POISSONS-EQUATION FOR THE POTENTIAL OF IMPURITY IONS IN SEMICONDUCTORS

被引：13

作者：

SCARFONE, LM ^{[1
]}

RICHARDSON, LM ^{[1
]}

机构：

[1] DIGITAL EQUIPMENT CORP,WESTBORO,MA 01581

来源：

PHYSICAL REVIEW B | 1980年 / 22卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.22.982

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：982 / 990

页数：9

共 50 条

[1] SPACE DEPENDENCE OF DIELECTRIC FUNCTION IN SI CRYSTAL [J].

AZUMA, M ;

SHINDO, K .

BARRIE, R .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1956, 69 (05) :553-561

[3]

BECKETT R, 1967, NUMERICAL CALCULATIO

[4]

BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS

[5]

BROOKS H, 1951, PHYS REV, V83, P879

[6]

BROOKS H, 1955, ADV ELECTRON, V7, P128

BROWNSTEIN, KR .

PHYSICAL REVIEW B, 1977, 15 (10) :5073-5075

BROWNSTEIN, KR .

PHYSICAL REVIEW B, 1978, 17 (06) :2795-2795

[9] THEORY OF IMPURITY SCATTERING IN SEMICONDUCTORS [J].

CONWELL, E ;

WEISSKOPF, VF .

PHYSICAL REVIEW, 1950, 77 (03) :388-390

[10]

CONWELL E, 1946, PHYS REV, V69, P258