DEFECT CREATION BY OPTICAL-EXCITATION IN HYDROGENATED AMORPHOUS-SILICON AS ELUCIDATED BY OPTICALLY DETECTED MAGNETIC-RESONANCE

被引：34

作者：

MORIGAKI, K

SANO, Y

HIRABAYASHI, I

机构：

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1982年 / 51卷 / 01期

关键词：

D O I：

10.1143/JPSJ.51.147

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：147 / 152

页数：6

共 14 条

[1]

DEPINNA S, UNPUB SOLID STATE CO

[2] TIME-RESOLVED LUMINESCENCE AND ITS FATIGUE EFFECT IN HYDROGENATED AMORPHOUS-SILICON [J].

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[3] NEW EVIDENCE FOR DEFECT CREATION BY HIGH OPTICAL-EXCITATION IN GLOW-DISCHARGE AMORPHOUS-SILICON [J].

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[4] RADIATIVE AND NONRADIATIVE RECOMBINATION PROCESSES IN HYDROGENATED AMORPHOUS-SILICON AS ELUCIDATED BY OPTICALLY DETECTED MAGNETIC-RESONANCE [J].

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[5] SPIN-DEPENDENT RADIATIVE AND NONRADIATIVE RECOMBINATIONS IN HYDROGENATED AMORPHOUS-SILICON - OPTICALLY DETECTED MAGNETIC-RESONANCE [J].

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[6] OPTICALLY DETECTED ELECTRON-SPIN RESONANCE IN AMORPHOUS SILICON [J].

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[7] FATIGUE EFFECT IN LUMINESCENCE OF GLOW-DISCHARGE AMORPHOUS-SILICON AT LOW-TEMPERATURES [J].

MORIGAKI, K ;

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SHIMAKAWA, K .

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[8]

MORIGAKI K, 1981, 9TH P INT C AM LIQ S

[9]

NITTA S, 1981, 9TH P INT C AM LIQ S

[10] LIGHT-INDUCED RADIATIVE RECOMBINATION CENTERS IN HYDROGENATED AMORPHOUS SILICON [J].

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BERKEYHEISER, JE .

APPLIED PHYSICS LETTERS, 1980, 37 (08) :705-706

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