CONTROL OF ELECTRICAL-PROPERTIES OF ION-BEAM SPUTTER-DEPOSITED PZT-BASED HETEROSTRUCTURE CAPACITORS

被引：4

作者：

GIFFORD, KD ^{[1
]}

AUCIELLO, O ^{[1
]}

KINGON, AI ^{[1
]}

机构：

[1] MCNC,DIV ELECTR TECHNOL,RES TRIANGLE PK,NC 27709

来源：

INTEGRATED FERROELECTRICS | 1995年 / 7卷 / 1-4期

关键词：

D O I：

10.1080/10584589508220232

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Previous work on pulsed laser ablation-deposition (PLAD) and sol-gel synthesis has shown that the crystallographic orientation of ferroelectric Pb(ZrxTi1-x)O-3 (PZT) films and electrical properties of PZT-based capacitors is controlled by the substrate and/or bottom electrode material type. Similar control is obtainable with the ion beam sputter deposition method. Also, a nonferroelectric phase that is nucleated during processing on RuO2/MgO substrates can be reduced or eliminated by interposing a layer of PbTiO3 (PT) between the electrode and the PZT film. The use of the PT layer and other proprietary modifications made to the RuO2 bottom electrode result in a substantial reduction in the fatigue of these PZT-based capacitors. The fatigue resistance and low de leakage current of these capacitors qualify their use in non-volatile ferroelectric random access (FRAM) and dynamic random access (DRAM) memory devices.

引用

页码：195 / 206

页数：12

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