RAMAN TENSOR OF GERMANIUM AND ZINCBLENDE-TYPE SEMICONDUCTORS

被引：21

作者：

CARDONA, M

机构：

来源：

关键词：

D O I：

10.1016/0038-1098(71)90571-0

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：819 / &

共 18 条

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[4] INTRINSIC OPTICAL ABSORPTION OF GALLIUM PHOSPHIDE BETWEEN 2.33 AND 3.12 EV
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[5] GOROFF I, 1963, PHYS REV, V132, P1080
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[7] CONTRIBUTIONS TO OPTICAL NONLINEARITY IN GAAS AS DETERMINED FROM RAMAN SCATTERING EFFICIENCIES
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[J]. PHYSICAL REVIEW, 1969, 188 (03): : 1209 - &
[8] LAWAETZ P, TO BE PUBLISHED
[9] RESONANT SURFACE RAMAN SCATTERING IN DIRECT-GAP SEMICONDUCTORS
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[J]. PHYSICAL REVIEW LETTERS, 1969, 22 (04) : 130 - &
[10] LEITE RCC, 1969, LIGHT SCATTERING SPE, P359