SPECTROSCOPIC ELLIPSOMETRY FOR DEPTH PROFILING OF ION-IMPLANTED MATERIALS

被引：34

作者：

VANHELLEMONT, J

ROUSSEL, P

MAES, HE

机构：

[1] Interuniversity Micro-Electronics Centre (IMEC), B-3001 Leuven

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1991年 / 55卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(91)96158-H

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The application of spectroscopic ellipsometry (SE) to obtain accurate depth profiles of ion-implanted silicon substrates is discussed. Details on the interpretation of SE spectra are given, explaining why such a complex analysis is possible. The power of SE to nondestructively obtain depth profiles of ion implantation damage is illustrated for hydrogen-implanted silicon and on low-dose implanted SIMOX (Separation by IMplanted OXygen) material. The obtained SE results are verified by cross-sectional transmission electron microscopy and by other analytical techniques.

引用

页码：183 / 187

页数：5

共 9 条

[1] Calculation of various physics constants in heterogenous substances I Dielectricity constants and conductivity of mixed bodies from isotropic substances [J].