MINORITY-CARRIER RECOMBINATION IN P-TYPE CDXHG1-XTE

被引：4

作者：

ADOMAITIS, E

GRIGORAS, K

KROTKUS, A

机构：

[1] Semicond. Phys. Inst., Acad. of Sci., 232600,Vilnius, Lithuania

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1990年 / 5卷 / 08期

关键词：

D O I：

10.1088/0268-1242/5/8/006

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Minority carrier recombination in p-type CdxHg1-xTe with x near 0.2 has been studied. The experiments were performed over the equilibrium hole concentration range of 1016-5*1017 cm-3 at temperatures between 77 and 300 K. Measurements have been made with a picosecond laser based optoelectronic arrangement with a time resolution of the order of 30 ps. The results have been compared with theoretical calculations. It is shown that Auger-7 is the dominant lifetime-limiting mechanism for non-equilibrium electron-hole recombination in narrow-gap p-type CdxHg1-xTe with hole concentrations exceeding 4*1016 cm-3.

引用

页码：836 / 841

页数：6

共 17 条

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