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VALENCE BAND DISCONTINUITIES AT THE HETEROJUNCTIONS BETWEEN CDTE, ZNTE, AND HGTE IN THE (100) ORIENTATION - X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY

被引：11
作者：
HSU, C
FAURIE, JP
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 02期
关键词：
D O I：
10.1116/1.584371
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：773 / 774
页数：2
相关论文
共 6 条
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PHYSICAL REVIEW LETTERS, 1987, 58 (11) :1127-1130
[2]  
HSU C, 1988, THESIS U ILLINOIS CH
[3]   CDTE-HGTE (1BAR1BAR1BAR) HETEROJUNCTION VALENCE-BAND DISCONTINUITY - A COMMON-ANION-RULE CONTRADICTION [J].
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CHEUNG, JT ;
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GRANT, RW .
PHYSICAL REVIEW LETTERS, 1986, 56 (15) :1605-1608
[4]   BAND LINEUPS AT II-VI HETEROJUNCTIONS - FAILURE OF THE COMMON-ANION RULE [J].
TERSOFF, J .
PHYSICAL REVIEW LETTERS, 1986, 56 (25) :2755-2758
[5]   BAND OFFSETS AT INTERFACES BETWEEN HGTE, CDTE, AND INSB [J].
VAN DE WALLE, CG ;
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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04) :1225-1228
[6]   CALCULATION OF THE VALENCE BAND OFFSETS OF COMMON-ANION SEMICONDUCTOR HETEROJUNCTIONS FROM CORE LEVELS - THE ROLE OF CATION D ORBITALS [J].
WEI, SH ;
ZUNGER, A .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04) :1239-1245
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