SPIN SEPARATION IN DILUTED MAGNETIC SEMICONDUCTOR QUANTUM-WELL SYSTEMS

被引:43
作者
JONKER, BT
LIU, X
CHOU, WC
PETROU, A
WARNOCK, J
KREBS, JJ
PRINZ, GA
机构
[1] SUNY BUFFALO,CTR ELECTR & ELECTROOPT MAT,BUFFALO,NY 14260
[2] SUNY BUFFALO,DEPT PHYS & ASTRON,BUFFALO,NY 14260
[3] IBM CORP,THOMAS J WATSON RES CTR,DIV RES,YORKTOWN HTS,NY 10598
关键词
D O I
10.1063/1.347779
中图分类号
O59 [应用物理学];
学科分类号
摘要
Heterostructures containing diluted magnetic semiconductor (DMS) layers offer the possibility of magnetically tuning the heterojunction band alignment due to the extraordinarily large spin-splitting of the DMS bands (large effective g-factor). This field-dependent band alignment has significant consequences for spin-dependent carrier confinement as evidenced in magnetooptic or magneto-transport experiments. We have examined two wide-gap DMS quantum well systems in which the band alignment is dominated by the DMS spin-splitting rather than by the more commonly observed effects of differences in bandgap, natural band offset, and strain. Quantum well structures with (Zn,Fe)Se or (Zn,Mn)Se barriers and ZnSe wells have been grown to investigate magnetically tuned, spin-dependent quantum confinement. In these systems, the band offset appears almost entirely in the conduction band, so that the electrons are confined to the ZnSe wells. However, the hole confinement is continuously tunable by an external magnetic field applied normal to the layer plane, since the valence band spin-splitting is approximately an order of magnitude larger at modest fields (1 T) than the zero field VB offset. This produces a field-induced spin dependent type I/type II band alignment and a consequent spatial spin separation of the holes. The quantum well structure exhibits a type I "straddling" alignment for the m(j) = + 3/2 level, with the spin "up" holes localized in the ZnSe wells, and a type II "staggered" alignment for the m(j) = - 3/2 level in which the spin "down" holes are localized in the barriers. The observed exciton splittings, intensities and temperature dependence are consistent with this model. In the Zn0.91Mn0.09Se/ZnSe system, a second bound state is observed in the conduction band in the sigma } polarization in magnetoreflectivity measurements. A quantitative fit to the data yields a value of approximately 1 meV for the zero field valence band offset. These systems represent the first DMS-based heterostructures in which such field-dependent confinement has been observed.
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页码:6097 / 6102
页数:6
相关论文
共 13 条
[1]   DILUTED MAGNETIC SEMICONDUCTORS - ISSUES AND OPPORTUNITIES [J].
FURDYNA, JK .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (04) :2002-2009
[2]   DILUTED MAGNETIC SEMICONDUCTORS [J].
FURDYNA, JK .
JOURNAL OF APPLIED PHYSICS, 1988, 64 (04) :R29-R64
[3]   GIANT EXCITON FARADAY-ROTATION IN CD1-XMNXTE MIXED-CRYSTALS [J].
GAJ, JA ;
GATAZKA, RR ;
NAWROCKI, M .
SOLID STATE COMMUNICATIONS, 1978, 25 (03) :193-195
[4]   EPITAXIAL-GROWTH AND X-RAY STRUCTURAL CHARACTERIZATION OF ZN1-XFEXSE FILMS ON GAAS(001) [J].
JONKER, BT ;
QADRI, SB ;
KREBS, JJ ;
PRINZ, GA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03) :1946-1949
[5]   MAGNETIC AND CRYSTALLOGRAPHIC CHARACTERIZATION OF ZN0.78FE0.22SE AND FESE FILMS ON GAAS (001) [J].
JONKER, BT ;
KREBS, JJ ;
QADRI, SB ;
PRINZ, GA ;
VOLKENING, F ;
KOON, NC .
JOURNAL OF APPLIED PHYSICS, 1988, 63 (08) :3303-3305
[6]   MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF THE DILUTE MAGNETIC SEMICONDUCTOR ZN1-XFEXSE [J].
JONKER, BT ;
KREBS, JJ ;
QADRI, SB ;
PRINZ, GA .
APPLIED PHYSICS LETTERS, 1987, 50 (13) :848-850
[7]  
JONKER BT, 1989, MATER RES SOC S P, V151, P151
[8]  
Kossut J., 1988, SEMICONDUCTORS SEMIM, V25
[9]   PHOTOLUMINESCENCE AND MAGNETOREFLECTIVITY STUDY OF ZN1-XFEXSE EPILAYERS [J].
LIU, X ;
PETROU, A ;
JONKER, BT ;
PRINZ, GA ;
KREBS, JJ ;
WARNOCK, J .
APPLIED PHYSICS LETTERS, 1988, 53 (06) :476-478
[10]   SPIN-DEPENDENT TYPE-I, TYPE-II BEHAVIOR IN A QUANTUM WELL SYSTEM [J].
LIU, X ;
PETROU, A ;
WARNOCK, J ;
JONKER, BT ;
PRINZ, GA ;
KREBS, JJ .
PHYSICAL REVIEW LETTERS, 1989, 63 (20) :2280-2283