INTRACOLLISIONAL FIELD-EFFECT IN THE HIGH-FIELD REGIME OF THE QUANTUM TRANSPORT-EQUATION USING MONTE-CARLO SIMULATIONS

被引:4
作者
ABDOLSALAMI, F [1 ]
KHAN, FS [1 ]
机构
[1] OHIO STATE UNIV,DEPT ELECTR ENGN,COLUMBUS,OH 43210
来源
PHYSICAL REVIEW B | 1990年 / 41卷 / 06期
关键词
D O I
10.1103/PhysRevB.41.3494
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have studied the importance of the intracollisional field effect in the quantum-mechanical transport equation derived by Khan, Davies, and Wilkins [Phys. Rev. B 36, 2578 (1987)] via Monte Carlo simulations. This equation is similar to other quantum transport equations in the literature [Barker and Ferry, Phys. Rev. Lett. 42, 1779 (1979)] and contains an electric-field-induced broadening (denoted by) of the energy-conserving function in semiclassical transition rates which is proportional to scrq, where scrE is the electric field and q is the change in electron momentum caused by scattering. We use a single parabolic band with parameters of the central valley of GaAs. The electrons are assumed to scatter with polar optical and acoustic phonons with the scattering parameters chosen to simulate GaAs. Our Monte Carlo analysis of the problem shows that intracollisional field effect is not important. This implies that in the field-dominant regime, i.e., >Latin small letter h with stroke/sc, the results obtained from the quantum transport equation reduce to those obtained from the semiclassical Boltzmann equation for a single-band semiconductor of infinite width, where sc-1 is the electron scattering-out rate. © 1990 The American Physical Society.
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页码:3494 / 3503
页数:10
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