INTERNAL FRICTION IN GERMANIUM AND SILICON .2. OXYGEN MOVEMENT AND DISLOCATION DAMPING

被引：13

作者：

SOUTHGATE, PD

机构：

来源：

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON | 1960年 / 76卷 / 489期

关键词：

D O I：

10.1088/0370-1328/76/3/310

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：398 / 408

页数：11

共 18 条

[1]

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FULLER, CS ;

LOGAN, RA .

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[3] THEORY OF MECHANICAL DAMPING DUE TO DISLOCATIONS [J].

GRANATO, A ;

LUCKE, K .

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[4] THEORY OF DIFFUSION-LIMITED PRECIPITATION [J].

HAM, FS .

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[5] ELECTRICAL AND OPTICAL PROPERTIES OF HEAT-TREATED SILICON [J].

KAISER, W .

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[6] INTERNAL FRICTION AND DEFECT INTERACTION IN GERMANIUM - THEORETICAL [J].

KESSLER, JO .

PHYSICAL REVIEW, 1957, 106 (04) :654-658

[7] INTERNAL FRICTION AND DEFECT INTERACTION IN GERMANIUM - EXPERIMENTAL [J].

KESSLER, JO .

PHYSICAL REVIEW, 1957, 106 (04) :646-653

[8] BEHAVIOR OF OXYGEN IN PLASTICALLY DEFORMED SILICON [J].

LEDERHANDLER, S ;

PATEL, JR .

PHYSICAL REVIEW, 1957, 108 (02) :239-242

[9] THERMAL ACCEPTORS IN GERMANIUM [J].

LETAW, H .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1956, 1 (1-2) :100-116

[10]

SEEGER A, 1957, DISC FARAD SOC, P16

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