LOW-TEMPERATURE LIQUID-PHASE EPITAXY GROWTH FOR ROOM-TEMPERATURE CW OPERATION OF 1.55-MU-M INGAASP-INP DOUBLE-HETEROSTRUCTURE LASER

被引：47

作者：

TAKAHEI, K

HAGAI, H

KAWAGUCHI, H

机构：

来源：

APPLIED PHYSICS LETTERS | 1980年 / 36卷 / 04期

关键词：

D O I：

10.1063/1.91473

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：309 / 310

页数：2

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[1] IN0.53GA0.47AS-IN1-XGAXASYP1-Y DOUBLE HETEROSTRUCTURE LASERS WITH EMISSION WAVELENGTH OF 1.67MU-M AT ROOM-TEMPERATURE
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[2] 1.67-MU-M GA0.47IN0.53AS-INP DH LASERS DOUBLE CLADDED WITH INP BY LPE TECHNIQUE
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[3] CONDITIONS OF LPE GROWTH FOR LATTICE MATCHED GAINASP-INP DH LASERS WITH (100) SUBSTRATE IN RANGE OF 1.2-1.5-MU-M
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (11) : 2067 - 2068
[4] ZINC CONTAMINATION AND MISPLACED P-N-JUNCTIONS IN INP-GAINPAS DH LASERS
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[5] 1.5 MU-M INGAASP-INP DH LASER WITH OPTICAL-WAVEGUIDE STRUCTURE
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HORIKOSHI, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (05) : 1005 - 1006
[6] ULTIMATE LOW-LOSS SINGLE-MODE FIBER AT 1.55 MU-M
MIYA, T
TERUNUMA, Y
HOSAKA, T
MIYASHITA, T
[J]. ELECTRONICS LETTERS, 1979, 15 (04) : 106 - 108
[7] INP-GAXIN1-XASYP1-Y DOUBLE HETEROSTRUCTURE FOR 1.5 MUM WAVELENGTH
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[J]. APPLIED PHYSICS LETTERS, 1978, 32 (04) : 234 - 236