DISTRIBUTION OF DONORS AND ACCEPTORS IN HIGH-PURITY GERMANIUM CRYSTALS

被引：8

作者：

HALLER, EE ^{[1
]}

HANSEN, WL ^{[1
]}

GOULDING, FS ^{[1
]}

机构：

[1] UNIV CALIF,LAWRENCE BERKELEY LAB,BERKELEY,CA 94720

来源：

关键词：

D O I：

10.1109/TNS.1973.4326951

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：481 / 487

页数：7

共 9 条

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BEER, AC
WILLARDSON, RK
[J]. PHYSICAL REVIEW, 1958, 110 (06): : 1286 - 1294
[2] HALL RN, AT3013870 CONTR
[3] HALLER EE, 1972, IEEE NUCL S, VNS19, P271
[4] HANSEN WL, 1972, IEEE T NUCL SCI, VNS19, P260
[5] MARRELLO V, TO BE PUBLISHED
[6] ANISOTROPIC HALL COEFFICIENTS IN N-TYPE GERMANIUM
MIYAZAWA, H
MAEDA, H
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1960, 15 (11) : 1924 - 1939
[7] FORMATION OF INJECTING AND BLOCKING CONTACTS ON HIGH-RESISTIVITY GERMANIUM
OTTAVIANI, G
NICOLET, MA
CAYWOOD, JM
MAYER, JW
MARRELLO, V
[J]. APPLIED PHYSICS LETTERS, 1972, 20 (08) : 323 - +
[8] SECCOMBE SD, 1972, 1 LINC LAB SOL STAT, P43
[9] van der Pauw L. J., 1958, PHILIPS RES REP, V1958, P1