A SIMPLE METHOD FOR EXTRACTION OF MULTIPLE-QUANTUM-WELL ABSORPTION-COEFFICIENT FROM REFLECTANCE AND TRANSMITTANCE MEASUREMENTS

被引：23

作者：

GERBER, DS

MARACAS, GN

机构：

[1] Center for Solid State Engineering Research, Arizona State University, Tempe, AZ

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1993年 / 29卷 / 10期

关键词：

D O I：

10.1109/3.250380

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A simple model is presented which takes into account interference effects in the common three-layer p-i-n diode epitaxial structure used for measurement of electroabsorption effects in multiple quantum well material. Antireflection coatings or surface roughening are not required to extinguish Fabry-Perot oscillations in the reflectance and transmittance spectra which improves the accuracy of the extracted absorption coefficient. Sources of error in the extracted absorption coefficient are examined. The absorption spectra of bulk GaAs and a 10-nm GaAs/10-nm AlGaAs multiple quantum well obtained using this method are compared with other measured results.

引用

收藏

页码：2589 / 2595

页数：7

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