(EXCESS CURRENT IN P-N JUNCTIONS ASSOCIATED WITH SURFACE STATES)

被引:2
作者
ESTEVE, D
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D O I
10.1049/el:19680237
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:305 / &
相关论文
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[3]  
MARTINOT H, CNETDGRST65451080079
[4]   INFLUENCE OF SURFACE CONDITIONS ON SILICON PLANAR TRANSISTOR CURRENT GAIN [J].
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[5]  
Sah C. T., 1961, P IRE, V49, P1623