RADIATION-DAMAGE OF BIPOLAR SST DUE TO GAMMA-RAYS OF CO-60

被引：4

作者：

IKEDA, H

UJIIE, N

机构：

[1] National Laboratory for High Energy Physics, Tsukuba, Ibaraki-ken, 305

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1990年 / 290卷 / 2-3期

关键词：

D O I：

10.1016/0168-9002(90)90565-N

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

In order to investigate radiation hardness of the bipolar SST transistors, transistor samples were exposed to gamma rays from an intense 60Co source. The transistor samples were hard up to a total dose of the order of 104 Gy. © 1990.

引用

页码：462 / 468

页数：7

共 7 条

[1]

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[2]

GROOM DE, 1988, RAD LEVELS SSC INTER

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IKEDA, H ;

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[4] MONOLITHIC PREAMPLIFIER WITH BIPOLAR SST FOR SILICON STRIP READOUT [J].

IKEDA, H ;

UJIIE, N ;

AKAZAWA, Y .

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[5]

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[6]

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[7] HIGH-SPEED AND PRECISE MONOLITHIC MULTIPLIER WITH RADIATION HARDNESS USING SILICON BIPOLAR SST [J].

UMEHIRA, M ;

KIKUCHI, H ;

KONAKA, S ;

KATO, S .

ELECTRONICS LETTERS, 1986, 22 (14) :744-746

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