PROPOSED PROCESS MODIFICATIONS FOR DYNAMIC BIPOLAR MEMORY TO REDUCE EMITTER-BASE LEAKAGE CURRENT

被引:5
作者
ANTIPOV, I
机构
关键词
D O I
10.1109/T-ED.1980.20083
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:1649 / 1654
页数:6
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