ELECTRON-TRANSPORT PHENOMENA IN TWO-DIMENSIONAL THIN-FILMS OF PURE BISMUTH

The Boltzmann transport equation was set up for the charge carriers (electrons and holes) in ultrathin films of pure bismuth. The motions of the charge carriers were two-dimensional in the film plane. Solutions of the Boltzmann equation were obtained in the presence of an electric field with and without the presence of a magnetic field. The electric conductivity, magnetoresistance and Hall resistance were derived and discussed. The possibility of the occurrence of the integral quantized Hall effect in two such carrier semimetallic films was also discussed.