FORMATION ENERGY OF EXCESS ARSENIC ATOMS IN N-TYPE GAAS

被引：12

作者：

NISHIZAWA, J

OYAMA, Y

DEZAKI, K

机构：

[1] Semiconductor Research Institute, Kawauchi, Sendai 980, Aoba-ku

来源：

PHYSICAL REVIEW LETTERS | 1990年 / 65卷 / 20期

关键词：

D O I：

10.1103/PhysRevLett.65.2555

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report the first determination of the formation energy of excess-As-atomrelated defects in Te-doped GaAs. The photocapacitance method in the constant-capacitance condition is applied to GaAs:Te prepared by 67-h annealing at 8501100°C under various As vapor pressures followed by rapid cooling. From an Arrhenius plot of the saturating deep-level density at quasi thermal equilibrium under high As vapor pressure, the formation energy of the defect is determined to be 1.16 eV in Te-doped horizontal-Bridgeman-grown GaAs crystals. © 1990 The American Physical Society.

引用

页码：2555 / 2558

页数：4

共 17 条

[1]

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[2] CHARACTERIZATION OF STOICHIOMETRY IN GAAS BY X-RAY-INTENSITY MEASUREMENTS OF QUASI-FORBIDDEN REFLECTIONS [J].