DIAGNOSTIC STUDY OF VHF PLASMA AND DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON FILMS

被引：70

作者：

ODA, S

NODA, J

MATSUMURA, M

机构：

[1] Department of Physical Electronics, Tokyo Institute of Technology, Tokyo

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1990年 / 29卷 / 10期

关键词：

A-Si:H; Amorphous; Langmuir probe; Optical emission; Plasma CVD; Plasma diagnostics; Silicon; VHF plasma;

D O I：

10.1143/JJAP.29.1889

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The role of the excitation frequency in processing plasma is investigated through comparative experiments of VHF and RF plasma by means of plasma diagnostics and deposition charaterisitcs of a-Si:H films. Electron temperature, electron density and the shape of the tail of the electron energy distribution function (EEDF) are evaluated from the Langmuir probe measurement. EEDF is also discussed based on optical emission spectra measured by He, H2SiH4plasma. The frequency effect is explained in terms of the effect of ω/ν on EEDF. Structural and electrical properties of a-Si:H films deposited both by VHF and RF plasma are also investigated. The favorable condition for obtaining device-quality a-Si:H films is discussed in connection with the plasma structure. © 1990 IOP Publishing Ltd.

引用

页码：1889 / 1895

页数：7

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