HIGH-BRIGHTNESS DIODE-LASER-PUMPED SEMICONDUCTOR HETEROSTRUCTURE LASERS

被引：4

作者：

LE, HQ

GOODHUE, WD

DICECCA, S

机构：

[1] Lincoln Laboratory, Massachusetts Institute of Technology, Lexington

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 11期

关键词：

D O I：

10.1063/1.107316

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A novel, generic design for diode-pumped lasers and amplifiers utilizing semiconductor heterostructures has been implemented in the InGaAs/GaAs/AlGaAs material system. The spatial and spectral characteristics of these heterostructures are optimized to provide low output beam divergence, low aspect ratio, high efficiency, and low threshold. A pump-power-limited cw output of 0.58 W was obtained with diode-array pumping, and a peak power of 33 W per facet was achieved with pulsed Ti:Al2 O3 laser pumping. A near-diffraction-limited output beam with a divergence of 14-degrees by 3.4-degrees has been obtained.

引用

页码：1280 / 1282

页数：3

共 7 条

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