LOW THRESHOLD FS-BH LASER ON P-INP SUBSTRATE GROWN BY ALL-MOCVD

被引：22

作者：

OHKURA, Y

KIMURA, T

NISHIMURA, T

MIZUGUCHI, K

MUROTANI, T

机构：

[1] Optoelectronic and Microwave Devices Laboratory, Mitsubishi ElectricCorporation, Itami, Hyogo 664

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 19期

关键词：

LASERS; SEMICONDUCTOR LASERS; CHEMICAL VAPOR DEPOSITION;

D O I：

10.1049/el:19921176

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel FS-BH laser structure using the selective growth characteristics of MOCVD on crystal facets has been developed. A threshold current as low as 12 mA and output power of 40 mW under CW operation have been achieved in the laser.

引用

页码：1844 / 1845

页数：2

共 3 条

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DEVLIN, WJ ;

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LENTON, CGD ;

WONG, S .

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[2]

TAKAMOTO A, 1987, ELECTRON LETT, V23, P546

[3] EFFECT OF MESA SHAPE ON THE PLANARITY OF INP REGROWTHS PERFORMED BY ATMOSPHERIC-PRESSURE AND LOW-PRESSURE SELECTIVE METALORGANIC VAPOR-PHASE EPITAXY [J].

ZILKO, JL ;

SEGNER, BP ;

CHAKRABARTI, UK ;

LOGAN, RA ;

LOPATA, J ;

VANHAREN, DL ;

LONG, JA ;

MCCRARY, VR .

JOURNAL OF CRYSTAL GROWTH, 1991, 109 (1-4) :264-271

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