THE J-J COUPLING IN BOUND EXCITONS IN THE EFFECTIVE MASS APPROXIMATION

被引:15
作者
PAN, DS
机构
关键词
D O I
10.1016/0038-1098(81)91209-6
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:375 / 378
页数:4
相关论文
共 19 条
[1]   WHY MUONS AND PROTONS ARE DEEP DONORS IN SI AND GE [J].
ALTARELLI, M ;
HSU, WY .
PHYSICAL REVIEW LETTERS, 1979, 43 (18) :1346-1349
[2]   CUBIC CONTRIBUTIONS TO SPHERICAL MODEL OF SHALLOW ACCEPTOR STATES [J].
BALDERES.A ;
LIPARI, NO .
PHYSICAL REVIEW B, 1974, 9 (04) :1525-1539
[3]   ENERGY LEVELS OF DIRECT EXCITONS IN SEMICONDUCTORS WITH DEGENERATE BANDS [J].
BALDERESCHI, A ;
LIPARI, NO .
PHYSICAL REVIEW B-SOLID STATE, 1971, 3 (02) :439-+
[4]   SPHERICAL MODEL OF SHALLOW ACCEPTOR STATES IN SEMICONDUCTORS [J].
BALDERESCHI, A ;
LIPARI, NO .
PHYSICAL REVIEW B, 1973, 8 (06) :2697-2709
[5]  
Bimberg D., 1970, Journal of Luminescence, V3, P175, DOI 10.1016/0022-2313(71)90055-X
[6]  
CONDON EU, 1963, THEORY ATOMIC SPECTR, P301
[7]   OPTICAL PROPERTIES OF EXCITONS BOUND TO NEUTRAL ACCEPTORS IN GAP [J].
DEAN, PJ ;
FAULKNER, RA ;
KIMURA, S ;
ILEGEMS, M .
PHYSICAL REVIEW B, 1971, 4 (06) :1926-&
[8]   BOUND-EXCITON ABSORPTION IN SI=AL, SI=GA, AND SI=IN [J].
ELLIOTT, KR ;
OSBOURN, GC ;
SMITH, DL ;
MCGILL, TC .
PHYSICAL REVIEW B, 1978, 17 (04) :1808-1815
[9]  
Koster G. F., 1963, PROPERTIES 32 POINT
[10]   FINE-STRUCTURE IN BOUND EXCITON AND MULTIPLE BOUND EXCITON LUMINESCENCE FROM ALUMINUM-DOPED SILICON [J].
LIGHTOWLERS, EC ;
HENRY, MO .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1977, 10 (09) :L247-L250