LOW-THRESHOLD, LARGE T-O INJECTION-LASER EMISSION FROM (INGA)AS QUANTUM DOTS

被引：658

作者：

KIRSTAEDTER, N

LEDENTSOV, NN

GRUNDMANN, M

BIMBERG, D

USTINOV, VM

RUVIMOV, SS

MAXIMOV, MV

KOPEV, PS

ALFEROV, ZI

RICHTER, U

WERNER, P

GOSELE, U

HEYDENREICH, J

机构：

[1] AF IOFFE PHYS TECH INST,ST PETERSBURG 194021,RUSSIA

[2] MAX PLANCK INST MIKROSTRUKTURPHYS,D-06120 HALLE,GERMANY

[3] LAB ELEKTRONENMIKROSKOPIE NAT WISSENSCH & MED,D-06120 HALLE,GERMANY

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 17期

关键词：

SEMICONDUCTOR JUNCTION LASERS; SEMICONDUCTOR QUANTUM DOTS;

D O I：

10.1049/el:19940939

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low threshold, large T-o injection laser emission via zero-dimensional states in (InGa)As quantum dots is demonstrated. The dots are formed due to a morphological transformation of a pseudomorphic In0.5Ga0.5As layer. Laser diodes are fabricated with a shallow mesa stripe geometry.

引用

页码：1416 / 1417

页数：2

共 8 条

[1] MULTIDIMENSIONAL QUANTUM WELL LASER AND TEMPERATURE-DEPENDENCE OF ITS THRESHOLD CURRENT [J].