EPITAXIAL-GROWTH OF AG FILMS ON INP(001) BY ATOMIC-BEAM EPITAXY IN ULTRAHIGH-VACUUM

被引：23

作者：

FARROW, RFC ^{[1
]}

机构：

[1] ROYAL SIGNALS & RADAR ESTAB,GREAT MALVERN WR14 3PS,WORCESTERSHIRE,ENGLAND

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1977年 / 10卷 / 10期

关键词：

D O I：

10.1088/0022-3727/10/10/003

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L135 / L138

页数：4

共 14 条

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[4] EVAPORATION OF INP UNDER KNUDSEN (EQUILIBRIUM) AND LANGMUIR (FREE) EVAPORATION CONDITIONS [J].

FARROW, RFC .

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[5]

FARROW RFC, 1977, CRYSTAL GROWTH MATER

[6]

FARROW RFC, 1974, J PHYS D, V7, pL1

[7]

FARROW RFC, 1975, 1975 EL SOC FALL M D

[8] INP MICROWAVE OSCILLATORS WITH 2-ZONE CATHODES [J].

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PATTISON, JE ;

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IRVING, LD .

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[9]

GRAY KW, 1975, 5TH P BIENN CORN EL, P215

[10] SURFACE STATES ON PHOSPHORUS-RICH AND GALLIUM-RICH GAP(111)P SURFACES IN ELECTRON ENERGY-LOSS SPECTROSCOPY AND PHOTOEMISSION [J].

JACOBI, K .

SURFACE SCIENCE, 1975, 51 (01) :29-37

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