SELECTIVE LIQUID-PHASE EPITAXY AND DEFECT REDUCTION IN GAAS GROWN ON GAAS-COATED SILICON BY MOLECULAR-BEAM EPITAXY

被引:15
作者
SAKAI, S [1 ]
MATYI, RJ [1 ]
SHICHIJO, H [1 ]
机构
[1] TEXAS INSTRUMENTS INC,CENT RES LABS,DALLAS,TX 75265
关键词
D O I
10.1063/1.98298
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1913 / 1915
页数:3
相关论文
共 10 条
[1]   PERFORMANCE OF QUARTER-MICRON GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS ON SI SUBSTRATES [J].
AKSUN, MI ;
MORKOC, H ;
LESTER, LF ;
DUH, KHG ;
SMITH, PM ;
CHAO, PC ;
LONGERBONE, M ;
ERICKSON, LP .
APPLIED PHYSICS LETTERS, 1986, 49 (24) :1654-1655
[2]   EFFECT OF INSITU AND EXSITU ANNEALING ON DISLOCATIONS IN GAAS ON SI SUBSTRATES [J].
CHOI, C ;
OTSUKA, N ;
MUNNS, G ;
HOUDRE, R ;
MORKOC, H ;
ZHANG, SL ;
LEVI, D ;
KLEIN, MV .
APPLIED PHYSICS LETTERS, 1987, 50 (15) :992-994
[3]   ROOM-TEMPERATURE CONTINUOUS OPERATION OF P-N ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURE LASERS GROWN ON SI [J].
DEPPE, DG ;
HOLONYAK, N ;
NAM, DW ;
HSIEH, KC ;
JACKSON, GS ;
MATYI, RJ ;
SHICHIJO, H ;
EPLER, JE ;
CHUNG, HF .
APPLIED PHYSICS LETTERS, 1987, 51 (09) :637-639
[4]   DISLOCATION REDUCTION IN EPITAXIAL GAAS ON SI (100) [J].
FISCHER, R ;
NEUMAN, D ;
ZABEL, H ;
MORKOC, H ;
CHOI, C ;
OTSUKA, N .
APPLIED PHYSICS LETTERS, 1986, 48 (18) :1223-1225
[5]   14.5-PERCENT CONVERSION EFFICIENCY GAAS SOLAR-CELL FABRICATED ON SI SUBSTRATES [J].
ITOH, Y ;
NISHIOKA, T ;
YAMAMOTO, A ;
YAMAGUCHI, M .
APPLIED PHYSICS LETTERS, 1986, 49 (23) :1614-1616
[6]   DEFECT REDUCTION BY THERMAL ANNEALING OF GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON SI SUBSTRATES [J].
LEE, JW ;
SHICHIJO, H ;
TSAI, HL ;
MATYI, RJ .
APPLIED PHYSICS LETTERS, 1987, 50 (01) :31-33
[7]   MICROSTRUCTURAL CHARACTERIZATION OF PATTERNED GALLIUM-ARSENIDE GROWN ON (001) SILICON SUBSTRATES [J].
MATYI, RJ ;
SHICHIJO, H ;
MOORE, TM ;
TSAI, HL .
APPLIED PHYSICS LETTERS, 1987, 51 (01) :18-20
[8]   ALGAAS/GAAS STRIPE LASER-DIODES FABRICATED ON SI SUBSTRATES BY MOCVD [J].
SAKAI, S ;
SHIRAISHI, H ;
UMENO, M .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1987, 23 (06) :1080-1084
[9]   MOCVD GROWTH OF GAAS ON SI SUBSTRATES WITH ALGAP AND STRAINED SUPERLATTICE LAYERS [J].
SOGA, T ;
HATTORI, S ;
SAKAI, S ;
TAKEYASU, M ;
UMENO, M .
ELECTRONICS LETTERS, 1984, 20 (22) :916-918
[10]   DEGRADATION OF GAAS-LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION ON SI SUBSTRATES [J].
VANDERZIEL, JP ;
DUPUIS, RD ;
LOGAN, RA ;
PINZONE, CJ .
APPLIED PHYSICS LETTERS, 1987, 51 (02) :89-91