GIGABIT PULSE POSITION BISTABILITY IN SEMICONDUCTOR-LASERS

被引：12

作者：

GALLAGHER, DFG ^{[1
]}

WHITE, IH ^{[1
]}

CARROLL, JE ^{[1
]}

PLUMB, RG ^{[1
]}

机构：

[1] STC TECHNOL LTD, HARLOW CM17 9NA, ESSEX, ENGLAND

来源：

JOURNAL OF LIGHTWAVE TECHNOLOGY | 1987年 / 5卷 / 10期

关键词：

D O I：

10.1109/JLT.1987.1075426

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1391 / 1398

页数：8

共 60 条

[1]

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[6] THE EFFECT OF CAVITY LENGTH ON PICOSECOND PULSE GENERATION WITH HIGHLY RF MODULATED ALGAAS DOUBLE HETEROSTRUCTURE LASERS [J].

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[8]

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[9] BISTABLE OPERATION AND SPECTRAL TUNING OF INJECTION-LASER WITH EXTERNAL DISPERSIVE CAVITY [J].

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ELISEEV, PG ;

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[10] GENERATION OF 4 PS LIGHT-PULSES FROM DIRECTLY MODULATED V-GROOVE LASERS [J].

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ELECTRONICS LETTERS, 1984, 20 (15) :640-641

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