学术探索
学术期刊
新闻热点
数据分析
智能评审

IMPURITY-INDUCED FREE-CARRIER MAGNETOABSORPTION IN SEMICONDUCTORS

被引：9
作者：
BASTARD, G
MYCIELSKI, J
RIGAUX, C
机构：
来源：
PHYSICAL REVIEW B | 1978年 / 18卷 / 12期
关键词：
D O I：
10.1103/PhysRevB.18.6990
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：6990 / 6995
页数：6
相关论文
共 6 条
[1]  
GRISAR R, 13TH P INT C PHYS SE, P1265
[2]   SHALLOW IMPURITY STATES IN INSB IN MAGNETIC-FIELDS - HIGH-FIELD DONOR STATES AND ACCEPTOR STATES [J].
LINCHUNG, PJ ;
HENVIS, BW .
PHYSICAL REVIEW B, 1975, 12 (02) :630-640
[3]   EFFECTS OF ELECTRON-PLASMON COUPLING ON MAGNETO-OPTICAL PROPERTIES OF SEMICONDUCTORS [J].
MCCOMBE, BD ;
WAGNER, RJ ;
TEITLER, S ;
QUINN, JJ .
PHYSICAL REVIEW LETTERS, 1972, 28 (01) :37-&
[4]   CALCULATION OF STRENGTH OF IMPURITY CYCLOTRON-RESONANCE HARMONICS [J].
MIYAKE, SJ .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1973, 35 (02) :551-557
[5]   INTRABAND MAGNETOABSORPTION IN MIXED SEMICONDUCTORS WITH COMPOSITION FLUCTUATIONS AND IN IMPERFECT SEMICONDUCTORS [J].
MYCIELSKI, J ;
BASTARD, G ;
RIGAUX, C .
PHYSICAL REVIEW B, 1977, 16 (04) :1675-1684
[6]  
MYCIELSKI J, 13TH P INT C PHYS SE, P451
1