APPLICATION OF SELECTIVE CHEMICAL-REACTION CONCEPT FOR CONTROLLING THE PROPERTIES OF OXIDES ON GAAS

被引：39

作者：

CHANG, RPH

COLEMAN, JJ

POLAK, AJ

FELDMAN, LC

CHANG, CC

机构：

[1] Bell Laboratories, Murray Hill

来源：

APPLIED PHYSICS LETTERS | 1979年 / 34卷 / 03期

关键词：

D O I：

10.1063/1.90750

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate how GaAs can be selectively oxidized in a plasma to control the physical and chemical properties of the oxides. Electrical measurements indicate that charged traps can be removed.

引用

页码：237 / 238

页数：2

共 10 条

[1] ANODIC OXIDE ON GAAS - QUANTITATIVE CHEMICAL DEPTH PROFILES OBTAINED USING AUGER-SPECTROSCOPY AND NEUTRON-ACTIVATION ANALYSIS [J].

CHANG, CC ;

SCHWARTZ, B ;

MURARKA, SP .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (06) :922-926

[2] PLASMA-GROWN OXIDE ON GAAS - SEMI-QUANTITATIVE CHEMICAL DEPTH PROFILES OBTAINED USING AUGER-SPECTROSCOPY AND NEUTRON-ACTIVATION ANALYSIS [J].

CHANG, CC ;

CHANG, RPH ;

MURARKA, SP .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (03) :481-487

[3] PLASMA OXIDATION OF GAAS [J].

CHANG, RPH ;

SINHA, AK .

APPLIED PHYSICS LETTERS, 1976, 29 (01) :56-58

[4] PLASMA OXIDATION OF ALUMINUM FILM ON GAAS - STUDY BY AUGER-SPECTROSCOPY AND TRANSMISSION ELECTRON-MICROSCOPY [J].

CHANG, RPH ;

CHANG, CC ;

SHENG, TT .

APPLIED PHYSICS LETTERS, 1977, 30 (12) :657-659

[5] MULTIPURPOSE PLASMA REACTOR FOR MATERIALS RESEARCH AND PROCESSING [J].

CHANG, RPH .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (01) :278-280

[6] NEW METHOD OF FABRICATING GALLIUM-ARSENIDE MOS DEVICES [J].

CHANG, RPH ;

COLEMAN, JJ .

APPLIED PHYSICS LETTERS, 1978, 32 (05) :332-333

[7] EFFECT OF INTERFACE ARSENIC DOMAINS ON ELECTRICAL-PROPERTIES OF GAAS MOS STRUCTURES [J].

CHANG, RPH ;

SHENG, TT ;

CHANG, CC ;

COLEMAN, JJ .

APPLIED PHYSICS LETTERS, 1978, 33 (04) :341-342

[8]

DELABRETEQUE P, 1976, GALLIUM, P55

[9] ANALYSIS OF PLASMA-GROWN GAAS OXIDE-FILMS [J].

KAUFFMAN, RL ;

FELDMAN, LC ;

POATE, JM ;

CHANG, RPH .

APPLIED PHYSICS LETTERS, 1977, 30 (07) :319-321

[10]

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