VARIABLE-RANGE-HOPPING MAGNETORESISTANCE

被引:36
作者
AZBEL, MY
机构
[1] Raymond and Beverly Sackler Faculty of Exact Sciences, School of Physics and Astronomy, Tel Aviv University, Ramat Aviv
来源
PHYSICAL REVIEW B | 1991年 / 43卷 / 03期
关键词
D O I
10.1103/PhysRevB.43.2435
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
I consider hopping magnetoresistance R of a two-dimensional insulator with small metallic impurities. I prove that if impurity density n is low (na(B)2 < 1, where a(B) is the impurity Bohr radius), R increases with magnetic field B. If na(B)2 > 1, then R(B) has a minimum. In both cases, in high magnetic field InR is-proportional-to square-root B/T, with the dependence on temperature T characteristic of one-dimensional hopping.
引用
收藏
页码:2435 / 2438
页数:4
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