PROPERTIES OF INVERTED RIB-WAVEGUIDE LASERS OPERATING AT 1.3 MU-M WAVELENGTH

被引：31

作者：

TURLEY, SEH

HENSHALL, GD

GREENE, PD

KNIGHT, VP

MOULE, DM

WHEELER, SA

机构：

来源：

ELECTRONICS LETTERS | 1981年 / 17卷 / 23期

关键词：

D O I：

10.1049/el:19810606

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：868 / 870

页数：3

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共 4 条

[1] CHANNELLED-SUBSTRATE NARROW-STRIPE GAAS-GAAIAS INJECTION-LASERS WITH EXTREMELY LOW THRESHOLD CURRENTS [J].

KIRKBY, PA .

ELECTRONICS LETTERS, 1979, 15 (25) :824-826

[2] CHANNELED SUBSTRATE BURIED HETEROSTRUCTURE GAAS-(GAAL)AS INJECTION-LASERS [J].

KIRKBY, PA ;

THOMPSON, GHB .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (10) :4578-4589

[3] INGAASP-INP BURIED CRESCENT LASER EMITTING AT 1-3 MU-M WITH VERY LOW THRESHOLD CURRENT [J].

MUROTANI, T ;

OOMURA, E ;

HIGUCHI, H ;

NAMIZAKI, H ;

SUSAKI, W .

ELECTRONICS LETTERS, 1980, 16 (14) :566-568

[4]

SAKUMA I, 1980, 7TH IEEE INT SEM LAS