ION-BEAM-INDUCED AMORPHIZATION OF SILICON SURFACES - ROLE ON THE FORMATION OF AU/SI(100) INTERFACES

被引：9

作者：

CARRIERE, B

DEVILLE, JP

ELMAACHI, A

机构：

来源：

SURFACE SCIENCE | 1986年 / 168卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(86)90845-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：149 / 157

页数：9

共 19 条

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[9] ANGLE-RESOLVED PHOTOEMISSION OF THE INITIAL-STAGES OF AU GROWTH ON SI(111) 7X7 [J].

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