DIELECTRIC-PROPERTIES OF GLASSY SE80TE20 AND SE80TE10CD10, SE80TE10IN10 AND SE80TE10SB10

被引：25

作者：

ARORA, R

KUMAR, A

机构：

来源：

REVUE DE PHYSIQUE APPLIQUEE | 1990年 / 25卷 / 02期

关键词：

D O I：

10.1051/rphysap:01990002502016900

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：169 / 176

页数：8

共 15 条

[1] THE X-RAY K-ABSORPTION STUDIES IN GLASSY SE80TE20 AND SE80TE10SB10 [J].

AGNIHOTRI, AK ;

KUMAR, A ;

NIGAM, AN .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1988, 101 (01) :127-129

[2]

[Anonymous], 1941, THEORY RATE PROCESSE

[3] CONDUCTION IN NON-CRYSTALLINE SYSTEMS .5. CONDUCTIVITY, OPTICAL ABSORPTION AND PHOTOCONDUCTIVITY IN AMORPHOUS SEMICONDUCTORS [J].

DAVIS, EA ;

MOTT, NF .

PHILOSOPHICAL MAGAZINE, 1970, 22 (179) :903-&

[4] THEORY OF AC CONDUCTION IN CHALCOGENIDE GLASSES [J].

ELLIOTT, SR .

PHILOSOPHICAL MAGAZINE, 1977, 36 (06) :1291-1304

[5] AC CONDUCTION IN AMORPHOUS-CHALCOGENIDE AND PNICTIDE SEMICONDUCTORS [J].

ELLIOTT, SR .

ADVANCES IN PHYSICS, 1987, 36 (02) :135-218

[6] ERRORS DUE TO LACK OF CONTACT IN MEASUREMENTS OF DIELECTRIC-RELAXATION PARAMETERS FOR SOLID POWDERS [J].

GOYAL, DR ;

WALKER, S ;

SRIVASTAVA, KK .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 64 (01) :351-357

[7]

GUINTINI JC, 1981, J NONCRYST SOLIDS, V45, P57

[8] STATES IN GAP AND RECOMBINATION IN AMORPHOUS-SEMICONDUCTORS [J].

MOTT, NF ;

DAVIS, EA ;

STREET, RA .

PHILOSOPHICAL MAGAZINE, 1975, 32 (05) :961-996

[9]

POLLAK P, 1972, PHYS REV LETT, V25, P1449

[10] DIELECTRIC PROPERTIES OF GLASSY AS10TE75GE15 [J].

SRIVASTAVA, KK ;

GOYAL, DR ;

KUMAR, A ;

LAKSHMINARAYAN, KN ;

PANWAR, OS ;

KRISHAN, I .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 41 (01) :323-329

← 1 2 →