LOW-TEMPERATURE METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION (LTMOCVD) OF DEVICE-QUALITY COPPER-FILMS FOR MICROELECTRONIC APPLICATIONS

Copper films for potential use in multilevel metallization in ULSIC's were produced by low temperature (250-350° C) metal-organic chemical vapor deposition (LTMOCVD) in atmospheres of pure H2 or mixture Ar/H2 from the β-diketonate precursor bis(1,1,1,5,5,5-hexafluoroacetylacetonato) copper(ll), Cu(hfa)2. The films were analyzed by x-ray diffraction (XRD), Rutherford backscattering (RBS), Auger electron spectroscopy (AES), scanning electron microscopy (SEM), and energy-dispersive x-ray spectroscopy (EDXS). The results of these studies showed that the films were uniform, continuous, adherent and highly pure-oxygen and carbon contents were below the detection limits of AES. Four point resistivity measurements showed that the copper films had very low resistivity, as low as 1.9 μΩcm for the films deposited in pure hydrogen atmosphere. Our preliminary results seem to indicate that LTMOCVD is a very attractive technique for copper multilevel metallizations. © 1990 The Minerals, Metals and Materials Society.