ETCHING BEHAVIOR OF PILE-IRRADIATED GERMANIUM AND SILICON SINGLE CRYSTALS

被引：10

作者：

CHANG, R

机构：

来源：

关键词：

D O I：

10.1063/1.1722759

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：385 / 387

页数：3

共 12 条

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[8] THE PLASTICITY OF SILICON AND GERMANIUM [J].

SEITZ, F .

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[9]

Seitz F., 1952, PHYS TODAY, V5, P6, DOI [10.1063/1.3067657, DOI 10.1063/1.3067657]

VERMA, AR .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1954, 67 (412) :359-360