PHOTOLUMINESCENCE STUDY OF CUINSE2 THIN-FILMS PREPARED BY THE SELENIZATION TECHNIQUE

被引：8

作者：

TANDA, M ^{[1
]}

MANAKA, S ^{[1
]}

MARIN, JRE ^{[1
]}

KUSHIYA, K ^{[1
]}

SANO, H ^{[1
]}

YAMADA, A ^{[1
]}

KONAGAI, M ^{[1
]}

TAKAHASHI, K ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,DEPT PHYS ELECTR,MEGURO KU,TOKYO 152,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1992年 / 31卷 / 6B期

关键词：

PHOTOLUMINESCENCE; CUINSE2; SELENIZATION; DEFECT; VACANCY;

D O I：

10.1143/JJAP.31.L753

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

CuInSe2 thin films were prepared by the selenization technique with solid- or vapor-phase selenium, and photoluminescence measurements were carried out to identify the energy levels associated with various defect structures. The possible origins of these defect states are discussed on the basis of the reported energy level diagram of single-crystal and thin-film CuInSe2. It is found that the photoluminescence measurement is sensitive to native defects and formation kinetics of CuInSe2 and useful in the optimization of the selenization process.

引用

页码：L753 / L755

页数：3

共 14 条

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