TLBRXI1-X PHOTODETECTORS FOR SCINTILLATION SPECTROSCOPY

被引：13

作者：

SHAH, KS ^{[1
]}

LUND, JC ^{[1
]}

OLSCHNER, F ^{[1
]}

ZHANG, J ^{[1
]}

MOY, LP ^{[1
]}

SQUILLANTE, MR ^{[1
]}

MOSES, WW ^{[1
]}

DERENZO, SE ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,LAWRENCE BERKELEY LAB,BERKELEY,CA 94720

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1994年 / 41卷 / 06期

关键词：

D O I：

10.1109/23.340638

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports on the evaluation of photodetectors fabricated from a ternary semiconductor, TlBrxI1-x for application in scintillation spectroscopy. These photodetectors are characterized in terms of their resistivity, charge transport parameters, quantum efficiency as a function of wavelength, and finally their performance as scintillation spectrometers. The details about TlBrxI1-x purification, crystal growth and device fabrication are also addressed.

引用

页码：2715 / 2718

页数：4

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