BEHAVIOR OF SELENIUM IN GALLIUM ARSENIDE

被引：109

作者：

VIELAND, LJ

KUDMAN, I

机构：

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1963年 / 24卷 / 03期

关键词：

D O I：

10.1016/0022-3697(63)90202-6

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：437 / &

共 22 条

[1]

ALLRED WP, 1960, SPR CHIC M EL SOC, P178

[2] EVIDENCE FOR A SELENIUM DONOR LEVEL ABOVE PRINCIPAL CONDUCTION BAND EDGE IN GASB [J].

BATE, RT .

JOURNAL OF APPLIED PHYSICS, 1962, 33 (01) :26-&

[3] ENERGY BAND STRUCTURE OF GALLIUM ANTIMONIDE [J].

BECKER, WM ;

FAN, HY ;

RAMDAS, AK .

JOURNAL OF APPLIED PHYSICS, 1961, 32 :2094-&

[4] THE DISTRIBUTION OF SOLUTE IN CRYSTALS GROWN FROM THE MELT .1. THEORETICAL [J].

BURTON, JA ;

PRIM, RC ;

SLICHTER, WP .

JOURNAL OF CHEMICAL PHYSICS, 1953, 21 (11) :1987-1991

[5] DETERMINATION OF TRACES OF SELENIUM - 3,3'-DIAMINOBENZIDINE AS SELENIUM(IV) ORGANIC REAGENT [J].

CHENG, KL .

ANALYTICAL CHEMISTRY, 1956, 28 (11) :1738-1742

[6]

GORYUNOVA NA, 1956, J TECH PHYS USSR, V26, P2157

[7]

GORYUNOVA NA, 1956, J TECH PHYS USSR, V26, P10

[8]

Hahn H., 1949, Z ANORG CHEM, V259, P135

[9] ORIENTATION-DEPENDENT DISTRIBUTION COEFFICIENTS IN MELT-GROWN INSB CRYSTALS [J].

MULLIN, JB ;

HULME, KF .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 17 (1-2) :1-&

[10]

NASLEDOV DN, 1959, SOV PHYS-SOL STATE, V1, P510

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